Al_Mg_Si合金GP區(qū)強化作用的價電子結構分析
(作者未知) 2010/10/25
摘要: 運用固體經驗電子理論,對Al - Mg - Si 合金GP 區(qū)(L10 型) 的價電子結構進行了計算。結果表明: GP 區(qū)晶胞最強鍵和次強鍵上的共價電子數遠比純Al 晶胞的最強鍵共價電子數多,其主鍵絡骨架對合金鍵絡起到增強作用,使得位錯運動難以切割,從而提高了合金的硬度。以Mg 原子為中心的共價鍵絡在GP 區(qū)生長時起到主導作用,生成較強的Mg - Mg 鍵和Mg - Si 鍵。由于細小共格的GP 區(qū)大量均勻脫溶沉淀提升了基體的整體鍵絡強度,同樣對合金產生強化作用。
關鍵詞: Al - Mg - Si 合金; GP 區(qū);價電子結構
Abstract :The valence electron structure of GP zone with model L10 in Al - Mg - Si alloy was calculated according to the empirical electronic theory
( EET) in solid. The results show that the number of the strongest and second strongest covalent bonds of GP zones is far more than that in ? - A1
cell. Because the primary bond - net framework of GP zone strengthens the matrix , it is difficult for the dislocation to cut the webs , resulting in in2
creasing the hardness of the alloy. Compared with the covalent bond - net with centered Si atom , the one with centered Mg atom predominates , leading
to the formation of the strong Mg - Mg and Mg - Si bonds. Since GP zone is coherent with matrix , the bond net strength is enhanced by the precipita2
tion of GP zones and so strengthen the alloy.
Key words :Al - Mg - Si alloy ; GP zone ; valence electron structure
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